SiC (Silicon Carbide) Hermetic Products (ADVANCE INFORMATION)
Power JFETs and Schottky Diodes
The Micross family of Silicon Carbide (SiC) Power JFETs and Schottky Diodes offer significant advantages over competing products based on silicon, GaAs, and IGBTs for power-based electronic applications. Products based on SiC provide significant improvement in performance where silicon has reached its theoretical limits. The operating junction temperature (TJ) of these SiC devices, ranges from -55°C up to 260°C* vastly exceeding capabilities of other technologies. Also, SiC devices have been shown to be inherently radiation tolerant to levels >100K RADs TID. These capabilities open up high performance opportunities ideal for the military, aerospace and down-hole drilling markets. SiC products enable performance that, in turn, allow customers to develop and market innovative and competitive products for high-power, high-efficiency, harsh-environment applications.
Why SiC is Ideal for your Military, Aerospace and Down-hole Applications
- Extreme Performance
- Operation Beyond Mil Temp
- Elevated Temp Range (TJ), -55°C to +200°C
- Extreme Temp Range (TJ), -55°C to +260°C*
- Inherent Radiation Tolerance >100K RADs TID
- More efficient than Silicon, GaAs & IGBT
- Lower Conduction and Switching Loss
- Faster Switching Frequencies and Higher Thermal Performance
- Metal Hermetic Packaging
Available Screening
- MIL-PRF-19500 Equivalent and other screening per Customer Source Control Drawing (SCD)
Die Inside
- SiC JFETs
- 1200V & 1700V Breakdown Voltages
- Very Low On Resistance, 45mΩ to 550mΩ
- Switching Times In ns
- No Tail Current, No Saturation Voltage
- Low Gate Charge
- Positive Temp Coefficient
- SiC Schottky Diodes
- 1200V Blocking Voltage
- 5 to 30 Amps IF
- Effective Zero Reverse & Zero Forward Recovery
- High Frequency Operation
- High Speed Low Loss Switching
SiC Applications
Down-hole Compressor
Electronics Exposed To Hostile Gasses and Very High Temperatures (175°C and up) |
Satellite Solar Inverters
Extreme Performance, Rad Tolerant, High Efficiency |
Jet Engine Control
Thermal Performance |
Mil Spec Power Supplies
High Reliability, Efficiency |
Products In Development
Click on the part number below to view the datasheet for specifications and ordering information.
Click here to download and view SiC Flyer.
SiC Power Schottky Diodes
| Part Number |
Voltage |
Current |
Hermetic Package |
| ASD1200S05 |
1200V |
5 A |
TO-257 |
| ASD1200S10 |
1200V |
10 A |
TO-257 |
| ASD1200S20D |
1200V |
20 A |
TO-257 |
| ASD1200S30 |
1200V |
30 A |
TO-257 |
SiC Power JFETs
| Part Number |
Type |
Voltage |
125°C Continuous
Drain Current |
On Resistance |
Hermetic Package |
| ASJE1700R550 |
Normally-Off |
1700V |
4 A |
550mΩ |
TO-258 |
| ASJE1200R100 |
Normally-Off |
1200V |
17 A |
100mΩ |
TO-258 |
| ASJE1200R063 |
Normally-Off |
1200V |
30 A |
63mΩ |
TO-258 |
| ASJD1200R085 |
Normally-On |
1200V |
45 A |
85mΩ |
TO-258 |
| ASJD1200R045 |
Normally-On |
1200V |
50 A |
45mΩ |
TO-258 |
has commercial plastic versions of this product available in TO-220 and TO-247 packages. For more information visit the SemiSouth website at http://www.semisouth.com/products/products.html.
* consult factory