Memory Device Characterization

• -65°C to 150°C & Higher Temperatures
• Bit Map
• Parameter Shmoo
• Average & Standard Development (4-corner Characterization)
• Parameter MARGIN
• ICC's over Temperature & VCC
• DC Parameters (Nano-Amp Precision)
• VCC Functional vs. Temperature
• Special Algorithm (Application Specific)
• Sensitivities or Intermittences
• Noise Margin Performance
• Data Retention Fail Threshold
• Speed
• Timing Sequence (Race Conditions Concerns)
• New Silicon Design Proof
• COTS ⁄ PEMS (Plastic Upscreen)